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A storage device built using materials such as gadolinium gallium garnet which are can be magnetised easily in only one direction. A film of these materials can be created so that it is magnetisable in an up-down direction. The magnetic fields tend to join together, some with the north pole facing up, some with the south.
When a veritcal magnetic field is imposed on this, the areas in opposite alignment to the field shrink to circles, or 'bubbles'. A bubble can be formed by reversing the field in a small spot, and can be destroyed by increasing the field.
Bubble memory is a kind of non-volatile storage but EEPROM, Flash Erasable Programmable Read-Only Memory and ferroelectric technologies, which are also non-volatile, are faster.
["Great Microprocessors of the Past and Present", V 4.0.0, John Bayko <bayko@hercules.cs.uregina.ca>, Appendix C]
(1995-02-03)
Nearby terms: BTW « BUAF « BUAG « bubble memory » bubble sort » bucky bits » buffer
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